• 文献标题:   Graphene growth controlled by the position and number of layers (n=0, 1, and more than 2) using Ni and MgO patterned ultra-flat Cu foil
  • 文献类型:   Article
  • 作  者:   LEE A, CHOI KS, PARK J, KIM TS, LEE J, CHOI JY, YU HK
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Ajou Univ
  • 被引频次:   0
  • DOI:   10.1039/c7ra09305e
  • 出版年:   2017

▎ 摘  要

The catalytic activity of transition metals with regard to carbo-hydroxyl molecules (CxHy) has triggered new technological developments in graphene growth. Both the opening of the Dirac-point by controlling the number of graphene layers as well as the patterning of the graphene are critical for applications such as transistor-based electronics. In this work, we have developed a method to control the position and number of layers (n = 0, 1, and more than 2) during graphene growth based on our previous key ideas. This was achieved by using pre-patterned (Ni pre-patterned for more than 2 layers due to its high carbon solubility compared to Cu and MgO pre-patterned for 0 layer graphene due to the low catalytic activity and carbon solubility) ultra-flat Cu foils made using the peeled off method from a c-plane sapphire substrate.