• 文献标题:   The Electronic Transport Properties in Boron-Doped Armchair Graphene Nanoribbon Junctions
  • 文献类型:   Article
  • 作  者:   ZHOU YH, WU JJ, HE P, DENG TF, DU SY, YE C
  • 作者关键词:   armchair graphene nanoribbon, boron b doped, rectifying behavior, electronic transport propertie
  • 出版物名称:   NANOSCIENCE NANOTECHNOLOGY LETTERS
  • ISSN:   1941-4900 EI 1941-4919
  • 通讯作者地址:   Hubei Univ
  • 被引频次:   3
  • DOI:   10.1166/nnl.2015.2013
  • 出版年:   2015

▎ 摘  要

An electronic component using individual molecules is one of the ultimate goals in nanotechnology. In this work, by performing non-equilibrium Green's functions in combination with density-functions theory, the transport properties of armchair graphene nanoribbon (AGNR) devices are investigated, in which one lead is undoped AGNRs and the other is Boron (B)-doped AGNRs. The current voltage (I V) characteristic of B-doped AGNRs devices depends on their width and exhibits three distinct family (3n, 3n +1, 3n +2) behaviors. It was found that the 3n+2 system exhibits a metallic property and 3n and 3n +1 systems exhibit semi conductive property. Moreover, it shows rectifying behavior for W7 system.