• 文献标题:   Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures
  • 文献类型:   Article
  • 作  者:   WU S, WANG JF, XIE HQ, GUO ZX
  • 作者关键词:   graphene, mos2, thermal conductivity, interfacial thermal conductance, firstprinciple, molecular dynamic
  • 出版物名称:   ENERGIES
  • ISSN:  
  • 通讯作者地址:   Shanghai Maritime Univ
  • 被引频次:   0
  • DOI:   10.3390/en13215851
  • 出版年:   2020

▎ 摘  要

The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Kappa of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m(2) K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.