• 文献标题:   Density of states of graphene in the presence of strong point defects
  • 文献类型:   Article
  • 作  者:   HUANG BL, CHANG MC, MOU CY
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Natl Taiwan Normal Univ
  • 被引频次:   14
  • DOI:   10.1103/PhysRevB.82.155462
  • 出版年:   2010

▎ 摘  要

The density of states near zero energy in a graphene due to strong point defects with random positions are computed. Instead of focusing on density of states directly, we analyze eigenfunctions of inverse T matrix in the unitary limit. Based on numerical simulations, we find that the squared magnitudes of eigenfunctions for the inverse T matrix show random-walk behavior on defect positions. As a result, squared magnitudes of eigenfunctions have equal a priori probabilities, which further implies that the density of states is characterized by the well-known Thomas-Porter-type distribution. The numerical findings of Thomas-Porter-type distribution are further derived in the saddle-point limit of the corresponding replica field theory of inverse T matrix. Furthermore, the influences of the Thomas-Porter distribution on magnetic and transport properties of a graphene, due to its divergence near zero energy, are also examined.