• 文献标题:   Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions
  • 文献类型:   Article
  • 作  者:   HACOHENGOURGY S, DIAMANT I, ALMOG B, DUBI Y, DEUTSCHER G
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Tel Aviv Univ
  • 被引频次:   3
  • DOI:   10.1063/1.3657146
  • 出版年:   2011

▎ 摘  要

We present the tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected T(c), from the accepted mean field model [T. O. Wehling et al., Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated T(c). (C) 2011 American Institute of Physics. [doi:10.1063/1.3657146]