▎ 摘　　要

In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (E-r) and the dip position (epsilon(dip)) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, epsilon(dip)=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.