▎ 摘　　要

We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V-tip. For G/GO/G junctions fabricated with large and small vertical bar V-tip vertical bar. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography cart be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.