• 文献标题:   Electrical properties of bilayer graphene synthesized using. surface wave microwave plasma techniques at low temperature
  • 文献类型:   Article
  • 作  者:   YAMADA T, KATO H, OKIGAWA Y, ISHIHARA M, HASEGAWA M
  • 作者关键词:   graphene, pmma, hall effect measurement, raman map
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Natl Inst Adv Ind Sci Technol
  • 被引频次:   0
  • DOI:   10.1088/1361-6528/28/2/025705
  • 出版年:   2017

▎ 摘  要

Bilayer graphene was synthesized at low temperature using. surface wave microwave plasma techniques where poly(methyl metacrylate) (PMMA) and methane (CH4) were used as carbon sources. Temperature-dependent Hall effect measurements were carried out in a. helium atmosphere. Sheet resistance, sheet carrier density and mobility showed weak temperature dependence for graphene from PMMA, and the highest carrier mobility is 740 cm(2) V-1 s(-1). For graphene from CH4, tunneling of the. domain boundary limited. carrier transport. The difference in average domain size. was. determined by Raman signal maps. In addition, residuals of PMMA were. detected on graphene from PMMA. The low sheet resistances of graphene synthesized at a. temperature of 280 degrees C using. plasma techniques were explained by the PMMA related residuals rather than the domain sizes.