▎ 摘　　要

The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SET conditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V. (C) 2014 The Japan Society of Applied Physics