• 文献标题:   Facile silane functionalization of graphene oxide
  • 文献类型:   Article
  • 作  者:   ABBAS SS, REES GJ, KELLY NL, DANCER CEJ, HANNA JV, MCNALLY T
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Univ Warwick
  • 被引频次:   7
  • DOI:   10.1039/c8nr04781b
  • 出版年:   2018

▎ 摘  要

The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid-base reaction using aqueous media. The successful grafting of the silane agent with pendant vinyl groups to rGO was confirmed by a combination of Fourier-transform infrared (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The structure and speciation of the silane-graphene network (nanosphere) and, the presence of free vinyl groups was verified from solid-state magic angle spinning (MAS) and solution C-13 and Si-29 nuclear magnetic resonance (NMR) measurements. Evidence from Scanning Electron Microscopy (SEM), High-Resolution Transmission Electron Microscopy (HRTEM) and TEM-High-Angle Annular Dark-Field (TEM-HAADF) imaging showed that these silane networks aided the exfoliation of the rGO layers preventing agglomeration, the interlayer spacing increased by 10 angstrom. The thermal stability (TGA/DTA) of VTMOS-rGO was significantly improved relative to GO, displaying just one degradation process for the silane network some 300 degrees C higher than either VTMOS or GO alone. The reduction of GO to VTMOS-rGO induced sp(2) hybridization and enhanced the electrical conductivity of GO by 10(5) S m(-1).