• 文献标题:   Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene
  • 文献类型:   Article
  • 作  者:   ZHANG XL, XU L, ZHANG J
  • 作者关键词:   quantum valley hall effect, gated bilayer graphene, boundary potential
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Xinjiang Univ
  • 被引频次:   1
  • DOI:   10.1088/1361-648X/aa648a
  • 出版年:   2017

▎ 摘  要

Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zeroenergy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.