▎ 摘　　要

We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity similar to 1.2 V/W (1.3 mA/W) and a noise equivalent power similar to 2 x 10(-9) W/root Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems. (C) 2014 AIP Publishing LLC.