• 文献标题:   Graphene films grown at low substrate temperature and the growth model by using MBE technique
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   LIN MY, GUO WC, WU MH, WANG PY, LEE SC, LIN SY
  • 作者关键词:   crystal structure, growth model, molecular beam epitaxy, elemental solid
  • 出版物名称:   JOURNAL OF CRYSTAL GROWTH
  • ISSN:   0022-0248
  • 通讯作者地址:   Acad Sinica
  • 被引频次:   2
  • DOI:   10.1016/j.jcrysgro.2012.12.068
  • 出版年:   2013

▎ 摘  要

By depositing atomic C atoms on the grained Cu foil by using molecular beam epitaxy technique (MBE), high-quality graphene is obtained at low substrate temperature 300 degrees C. A model of initial graphene flake formation as crystal seeds and following lateral graphene growth is established to explain the growth mechanisms. After atomic C atom deposition, no significant difference is observed before and after MBE growth. The results suggest that the deposition of atomic C atoms will not improve the crystalline quality of pre-formed C films. The low substrate temperature required would be advantageous for the practical application of graphene. (c) 2013 Elsevier B.V. All rights reserved.