▎ 摘　　要

A reduced graphene oxide (rGO) film is mechanically fragile; therefore, transferring it to another substrate without damage is crucial. Hence, a technique that facilitates the formation of an integrated rGO film that holds adhesion with the substrate is desired. Moreover, a rGO film on metal is promising as an electrode for energy storage devices. This work presents the formation of rGO film on copper using electrophoretic deposition (EPD) and flash sintering. Briefly, a stable aqueous dispersion of graphene oxide (GO) layers was used to form a uniform GO film on copper at a fixed deposition voltage and time duration. To reduce the GO film without detaching it from copper, pulse energy (1-10 J cm-2) was varied for a fixed exposure time (10 ms) and a single micropulse. At pulse energy of 6 J cm-2, the structural studies indicated turbostratic stacking (decreased interlayer spacing) and restored crystallinity (decreased peak intensity ratio of D and G bands). The morphology showed voids between stacked rGO layers and high roughness in the film. The reduction resulted in mesoporous and high surface area (373 m2 g-1) multilayer rGO film. Due to restored electrical conductivity, the rGO film showed a specific capacitance of 475.8 F g-1 at a scan rate of 2 mV s-1. An increase in contact angle from -66 degrees to -81 degrees also validated the reduction. The combination of EPD and flash sintering offers rapid and eco-friendly formation of binder-free rGO film on copper, promising as an electrode for supercapacitors.