▎ 摘　　要

We investigate valley-dependent electron transport properties of a gapped graphene film modulated by a ferromagnetic metal (FM) stripe with magnetization along the current direction. The antisymmetric stray field of the FM stripe alone does not generate a valley-polarized current due to an intrinsic symmetry. The inclusion of an electric barrier breaks this symmetry. It is shown that highly valley-polarized electron transport can be achieved in this magnetic-electric barrier structure, which results from a valley-dependent phase mechanism. The valley polarization can be tuned by the barrier parameters.