• 文献标题:   Doping mechanisms in graphene-MoS2 hybrids
  • 文献类型:   Article
  • 作  者:   SACHS B, BRITNELL L, WEHLING TO, ECKMANN A, JALIL R, BELLE BD, LICHTENSTEIN AI, KATSNELSON MI, NOVOSELOV KS
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Hamburg
  • 被引频次:   68
  • DOI:   10.1063/1.4852615
  • 出版年:   2013

▎ 摘  要

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer molybdenum disulfide (MoS2). From first-principles simulations, we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample. (C) 2013 AIP Publishing LLC.