• 文献标题:   Graphene/SiC heterojunction nanoarrays: toward field emission applications with low turn-on fields and high stabilities
  • 文献类型:   Article
  • 作  者:   WANG L, JIANG L, ZHANG T, GAO FM, CHEN SL, YANG WY
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY C
  • ISSN:   2050-7526 EI 2050-7534
  • 通讯作者地址:   Ningbo Univ Technol
  • 被引频次:   2
  • DOI:   10.1039/c9tc05035c
  • 出版年:   2019

▎ 摘  要

Low turn-on fields (E-to) and high current emission stabilities are recognized as two crucial factors for the potential applications of field emission (FE) cathodes. In this work, graphene/SiC (G/SiC) heterojunction nanowire arrays were fabricated through catalyst-assisted pyrolysis of polymeric precursors. Aiming to explore advanced field emitters, G/SiC nanoarrays are designed to grow with a desired architecture including sharp tips, rough surface, incorporated dopants, and well-aligned configurations, which could fundamentally increase the effective emission sites, tailor the band gap structure, fully utilize the local field enhancement effect, and limit the shielding effect. The G/SiC emitters established exceptional FE properties with low and stable E-to of 1.10-1.12 V mu m(-1) when subjected to various anode-cathode distances, as well as a small current emission fluctuation of similar to 3.7% over 5 h and high field enhancement factor up to 6383, which were comparable to the state-of-the-art ones previously reported, representing their totally excellent FE performance.