▎ 摘　　要

We have investigated the UV-light-induced defect formation in single- and multilayer graphenes on a SiO2 (300 nm)/Si substrate. Remarkable selectivity for the number of layers was observed; only a single layer graphene is damaged while a multilayer graphene is stable against UV irradiation. We also performed UV irradiation on two kinds of single-layer graphene on Pt(111): the graphene grown on Pt(111) by chemical vapor deposition process and the graphene transferred onto Pt(111). UV irradiation of the graphene grown on Pt(111) did not lead to defect formation, while the graphene transferred onto Pt(111) was damaged by UV irradiation. The differences imply the importance of interfacial interaction between the graphene and the substrate. We have concluded that the pi-pi stacking in a multilayer graphene or the strong interaction with metal substrates in a single-layer graphene prevents the formation of defect via suppression of corrugation, which is likely to occur in a free-standing-like single-layer graphene.