• 文献标题:   p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate
  • 文献类型:   Article
  • 作  者:   KURCHAK AI, ELISEEV EA, KALININ SV, STRIKHA MV, MOROZOVSKA AN
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW APPLIED
  • ISSN:   2331-7019
  • 通讯作者地址:   Natl Acad Sci Ukraine
  • 被引频次:   10
  • DOI:   10.1103/PhysRevApplied.8.024027
  • 出版年:   2017

▎ 摘  要

The p-n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate-dielectric-layer-graphene-channel-ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p-n junctions.