▎ 摘　　要

In this work we propose multilayer graphene (MLG) nanobelts for high current interconnections with single wall carbon nanotubes (SWCNT) and compare these with metal contacts. MLG contacts were directly printed on the SWCNT, without any additional metal parts, demonstrating the possibility to use these materials as interconnections in microelectronics. Different work function metals Al, Ti and Pd were probed for the lowest contact resistance with the SWCNT. Ti contacts demonstrated the best results among the metals owing to its work function being closest to the SWCNT and therefore giving the lowest Schottky barrier. Even though Ti contacts show the lowest contact resistance, the current density for MLG contacts was higher, giving the best results for high current interconnection applications. Moreover, MLG contacts show a stable and repeatable resistance decrease under high current conditions. Heat treatment of the MLG and metal contacts was completed in vacuum, in order to further reduce the contact resistance and optimal heat treatment conditions were found at 600 degrees C.