• 文献标题:   Graphene Transistors: Status, Prospects, and Problems
  • 文献类型:   Article
  • 作  者:   SCHWIERZ F
  • 作者关键词:   bilayer graphene, fieldeffect transistor fet, graphene, graphene nanoribbon, logic circuit, radio frequency rf
  • 出版物名称:   PROCEEDINGS OF THE IEEE
  • ISSN:   0018-9219 EI 1558-2256
  • 通讯作者地址:   Tech Univ Ilmenau
  • 被引频次:   247
  • DOI:   10.1109/JPROC.2013.2257633
  • 出版年:   2013

▎ 摘  要

Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were intentionally fabricated, the worldwide research activities on graphene have literally exploded. Apart from physicists, also device engineers became interested in the new material and soon the prospects of graphene in electronics have been considered. For the most part, the early discussions on the potential of graphene had a prevailing positive mood, mainly based on the high carrier mobilities observed in this material. This has repeatedly led to very optimistic assessments of the potential of graphene transistors and to an underestimation of their problems. In this paper, we discuss the properties of graphene relevant for electronic applications, examine its advantages and problems, and summarize the state of the art of graphene transistors.