▎ 摘　　要

We present theoretical results for the temperature and magnetic field dependence of the thermoelectric response in monolayer graphene systems due to scattering by random charged impurity centers. The main effect of the random charged impurities is considered within the random phase approximation (RPA) and consists in a drastically changed energy dependence of the electron scattering time. The system's electrical conductivity (G), Seebeck coefficient (S), thermal conductivity (kappa), and the system's thermoelectric figure of merit (ZT) are considered as function of temperature and external magnetic field. As a general result, the thermoelectric response of the monolayer graphene system is magnetic field dependent in the low temperature regime, but its dependence fades as the temperature is increased.