• 文献标题:   Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification
  • 文献类型:   Article
  • 作  者:   HOU YX, GENG XM, LI YZ, DONG B, LIU LW, SUN MT
  • 作者关键词:   ptype ntype graphene, electrical property, raman property
  • 出版物名称:   SCIENCE CHINAPHYSICS MECHANICS ASTRONOMY
  • ISSN:   1674-7348 EI 1869-1927
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   10
  • DOI:   10.1007/s11433-011-4253-9
  • 出版年:   2011

▎ 摘  要

We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra.