• 文献标题:   Nonlinear transport of graphene in the quantum Hall regime
  • 文献类型:   Article
  • 作  者:   TIAN SB, WANG PJ, LIU X, ZHU JB, FU HL, TANIGUCHI T, WATANABE K, CHEN JH, LIN X
  • 作者关键词:   graphene, quantum hall effect, quantum resistance standard
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Peking Univ
  • 被引频次:   1
  • DOI:   10.1088/2053-1583/4/1/015003
  • 出版年:   2017

▎ 摘  要

Wehave studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the nu = +/- 6 states might be a better target for the quantum resistance standard.