▎ 摘　　要

To enable graphene oxide (GO) flakes for application based on solution processable technology, we show that they can be self-assembled from solution on flexible substrate driven by a Coulomb interaction with the self-assembled monolayer (SAM). Field-effect transistors exhibit a high hole mobility around 14 cm(2) /V.s after a reduction process from GO to reduced GO (rGO), and meanwhile the device resistance shows a linear scaling behavior with the channel length. Due to the flexibility of the SAM, the device parameters maintain stable, while different strains are applied to the substrate. This approach makes the combination of rGO and SAM suitable for low-cost flexible applications. (C) 2014 AIP Publishing LLC.