• 文献标题:   Highly defective graphene: A key prototype of two-dimensional Anderson insulators
  • 文献类型:   Article
  • 作  者:   LHERBIER A, ROCHE S, RESTREPO OA, NIQUET YM, DELCORTE A, CHARLIER JC
  • 作者关键词:   graphene, electronic transport, anderson insulator, localization
  • 出版物名称:   NANO RESEARCH
  • ISSN:   1998-0124
  • 通讯作者地址:   Catholic Univ Louvain
  • 被引频次:   20
  • DOI:   10.1007/s12274-013-0309-7
  • 出版年:   2013

▎ 摘  要

Electronic structure and transport properties of highly defective two-dimensional (2D) sp(2) graphene are investigated theoretically. Classical molecular dynamics are used to generate large graphene planes containing a considerable amount of defects. Then, a tight-binding Hamiltonian validated by ab initio calculations is constructed in order to compute quantum transport within a real-space order-N Kubo-Greenwood approach. In contrast to pristine graphene, the highly defective sp(2) carbon sheets exhibit a high density of states at the charge neutrality point raising challenging questions concerning the electronic transport of associated charge carriers. The analysis of the electronic wavepacket dynamics actually reveals extremely strong multiple scattering effects giving rise to mean free paths as low as 1 nm and localization phenomena. Consequently, highly defective graphene is envisioned as a remarkable prototype of 2D Anderson insulating materials.