▎ 摘　　要

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and a microwave-induced electron transport method. It was found that the interaction with the nanowires induces spectral changes and leads to a significant enhancement of the Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process, and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed us to determine the carrier concentration fluctuations induced by the GaN nanowires. A comparison of the Raman scattering spatial intensity maps and the images obtained using a scanning electron microscope led to a conclusion that the vertically aligned GaN nanowires induce a homogenous strain, substantial spatial modulation of the carrier concentration in graphene, and unexpected homogenous distribution of defects created by the interaction with the nanowires. The analysis of the D and D' peak intensity ratio showed that the interaction with the nanowires also changes the probability of scattering on different types of defects. The Raman studies were correlated with the weak localization effect measured using microwave-induced contactless electron transport. The temperature dependence of the weak localization signal showed electron-electron scattering as the main decoherence mechanism with an additional, temperature-independent scattering-reducing coherence length. We attributed it to the interaction of electrons in graphene with charges present on top of nanowires due to the spontaneous and piezoelectric polarization of GaN. Thus, nanowires act as antennas and generate an enhanced near field, which can explain the observed significant enhancement of the Raman scattering intensity.