• 文献标题:   Quantum Hall Effect in Twisted Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   LEE DS, RIEDL C, BERINGER T, CASTRO NETO AH, VON KLITZING K, STARKE U, SMET JH
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Max Planck Inst Festkoperforsch
  • 被引频次:   67
  • DOI:   10.1103/PhysRevLett.107.216602
  • 出版年:   2011

▎ 摘  要

We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.