▎ 摘　　要

The growth of graphene and graphite films on nickel surface under conditions for ultrahigh-vacuum carburization and subsequent annealing is studied at film thicknesses ranging from a single layer to ae1000 layers. The cooling of nickel carburized at a temperature of 900-1500 K leads to the growth of graphene and thin graphite films the thickness of which depends on the carburization temperature and the growth temperature of the films. Dissolution of nickel with graphite film in diluted sulfuric acid makes it possible to separate the film from the sample. The graphite film thickness amounts to Ee0.4 A mu m at carburization and growth temperatures of 1500 and 1100 K, respectively.