• 文献标题:   The effect of h-BN buffer layers in bilayer graphene on Co (111)
  • 文献类型:   Article
  • 作  者:   LI C, LIU Y, ZHANG B, WANG T, GUO Q, SHENG K, YIN Y
  • 作者关键词:   graphene, co, interface
  • 出版物名称:   JOURNAL OF THE KOREAN PHYSICAL SOCIETY
  • ISSN:   0374-4884 EI 1976-8524
  • 通讯作者地址:   Zhejiang Univ
  • 被引频次:   2
  • DOI:   10.3938/jkps.66.1631
  • 出版年:   2015

▎ 摘  要

Understanding of the interface of Co/graphene is essential for applications of graphene-based devices, as well as in the process of graphene synthesis. In this paper, the Co/graphene interface, including five structures of bilayer graphene (BLG) on Co (111) surface with bilayer or monolayer BN buffer sheets, is investigated by using density functional theory calculations. The corresponding atomic and electronic structures and Mulliken charge populations are also analyzed. The bilayer BN sheets are found to be the thinnest insulator for the backside Co metal gate, which shields BLG from Co substrate pining, decreases the charges influenced by the substrate, and improves BLG transport mobility.