• 文献标题:   Specular Andreev reflection and magnetoresistance in graphene-based ferromagnet-superconductor double junctions
  • 文献类型:   Article
  • 作  者:   BAI CX, YANG YL, ZHANG X
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Beijing Normal Univ
  • 被引频次:   38
  • DOI:   10.1063/1.2894513
  • 出版年:   2008

▎ 摘  要

Spin-polarized transports of relativistic electrons through graphene-based ferromagnet-superconductor double junctions have been investigated theoretically. In the presence of specular Andreev reflection, some unusual properties are found. The oscillating negative magnetoresistance (MR) is not only observed, but the resonance peak of the MR also appears at a certain bias voltage due to the retroreflection crossing over to the specular Andreev reflection. This means that the MR can be tuned by external bias voltage, which benefits the spin-polarized electron device based on the graphene materials. (c) 2008 American Institute of Physics.