• 文献标题:   Raman Spectral Mapping of III-V Nitride and Graphene Nanostructures
  • 文献类型:   Article
  • 作  者:   PATSHA A, MADAPU KK, DHARA S
  • 作者关键词:   gallium nitride, indium nitride, surface optical mode, polarization, hot filament chemical vapor deposition
  • 出版物名称:   MAPANJOURNAL OF METROLOGY SOCIETY OF INDIA
  • ISSN:   0970-3950 EI 0974-9853
  • 通讯作者地址:   Indira Gandhi Ctr Atom Res
  • 被引频次:   2
  • DOI:   10.1007/s12647-013-0082-9
  • 出版年:   2013

▎ 摘  要

Among several spectroscopic imaging techniques to visualise the nanostructures, Raman spectral imaging is one of the most indispensible non-destructive tools. We discuss the limitations and the importance of each step involved in the Raman imaging in the visualization of different nanostructures and illustrated with examples. Raman spectroscopic imaging of nanostructures is demonstrated for differentiation of morphology in InN nanorods, crystallographic orientation for single square faceted GaN nanotube and layer thickness of graphene layers. The limitations of the spatial and spectral resolutions of the Raman maps are evaluated in the illustration.