▎ 摘　　要

Doping with nitrogen in controllable configurations is very valuable to tailor the properties of graphene. Here we report density-functional theory calculations of chemical reactions of ammonia, a widely used nitrogen source, at vacancies and edges of graphene, through which we explore strategies to achieve N-doped graphene with optimized properties. We show that at different defects, ammonia reacts to form nitrogen impurities in distinct configurations, i.e. graphitic-N at single vacancies, pyridinic- or pyrrolic-N at divacancies, pyrrolic-N at armchair edges, and N in a four-member ring at zigzag edges. Moreover, different nitrogen-related defect configurations introduce distinct changes in the electronic structure of graphene. By calculating the core level shift of C-1s electrons, we find configuration-dependent redistribution of electrons around the N-dopant. A discussion of how to achieve optimized doping and enhanced chemical reactivity in experiments is included.