▎ 摘　　要

The interaction between graphene and various substrates plays an important and limiting role on the behavior of graphene films and devices. Here we uncover that dynamic screening of so-called remote substrate phonons (RPs) has a significant effect on the thermal coupling at the graphene-substrate interface. We calculate the thermal conductance h(RP) between graphene electrons and substrate, and its dependence on carrier density and temperature for SiO2, HfO2, h-BN, and Al2O3 substrates. The dynamic screening of RPs leads to one order of magnitude or more decrease in hRP and a change in its dependence on carrier density. Dynamic screening predicts a decrease of similar to 1 MW K-1 m(-2) while static screening predicts a rise of similar to 10 MW K-1 m(-2) when the carrier density in Al2O3-supported graphene is increased from 10(12) to 10(13) cm(-2).