▎ 摘　　要

A method to grow few-layer graphene in the form of an "inverted pagoda" is proposed by controlling the pressure and the flow rate in a circulating chemical vapor deposition system. Such single-crystal few-layer graphene consists of one- to eight-layer graphene areas exhibiting layer growth characteristics. Moreover, each layer within this kind of few-layer graphene is in Bernal stacking. In this work, with increasing growth pressure, the self-limiting effect of graphene was successfully overcome, and the growth of graphene in the vertical direction was achieved. By controlling the ratio of H-2/CH4, the morphology and the number of layers of the multilayer graphene under the single-layer graphene were modulated.