• 文献标题:   Preparation of Partially Reduced Graphene Oxide Nanosheets/Poly (Sodium 4-Styrenesulfonate) Composite with High Capacitance
  • 文献类型:   Article
  • 作  者:   YAN W, YU WJ, WANG L, ZHANG D, GE XQ, HANG JZ, DENG W, SHI LY
  • 作者关键词:   partially reduced graphene oxide, n ndimethylformamide, poly sodium 4styrenesulfonate, potentiostatic reduction, high capacitance
  • 出版物名称:   ELECTROCHIMICA ACTA
  • ISSN:   0013-4686 EI 1873-3859
  • 通讯作者地址:   Shanghai Univ
  • 被引频次:   8
  • DOI:   10.1016/j.electacta.2014.09.120
  • 出版年:   2014

▎ 摘  要

Partially reduced graphene oxide nanosheet (prGON)/poly(sodium 4-styrenesulfonate) (PSS) composite with very high specific capacitance were prepared. Graphene oxide nanosheets (GON) were firstly partially reduced by a weak reducing agent, and PSS was attached to prGON through p-p stacking, acting as a spacer to prevent prGON from agglomeration. Otherwise, PSS could only bind GON through combining with the hydroxyl groups on GON. The prGON/PSS composite was then potentiostatically reduced at a constant potential. During the electrochemical reduction, the carbonyl groups on the prGON/PSS composite were gradually reduced to other oxygen functionalities instead of being removed. The redox-active oxygen-containing groups on the electrochemically reduced prGON/PSS composite were stable in the potential scanning range, and introduced pseudocapacitance. The specific capacitance of the prGON/PSS composite after electrochemical reduction reached 367.2 F/g in 1 M KCl aqueous solution at the scanning rate of 5 mV/s, and retained its 93.8% capacitance after 1600 cycles. The superior capacitance performance can be ascribed to the outstanding intrinsic properties of graphene, the PSS spacer attached to prGON through p-p stacking, and the pseudo-capacitance introduced by the oxygen-containing groups. (C) 2014 Elsevier Ltd. All rights reserved.