▎ 摘　　要

Layered structure of graphene is supportive to magneto-transport measurements and give a chance to mobilize the charge distribution in parallel layers. Here, we demonstrate the magnetic field dependent modulations in mobility of single layer graphene (SLG) and artificially piled decoupled graphene layer (DGL). The D-band in Raman spectrum arises when high quality chemical vapor deposition grown single layers are decoupled. The calculated field effect charge carrier mobility by employing fitting method is in good agreement with conventional carrier density dependent approach and found to be enhanced by increasing applied magnetic field. The mobility of SLG at 9 T is found to be enhanced about three times, whereas in DGL it increases asymmetrically with almost twice for the holes and, one and half times for the electrons. Amplified cyclotron frequency and localization of Dirac fermions under magnetic field considered a hallmark for mobility enhancement. In addition, electrons and holes mobility behave asymmetrically in DGL system and this behavior become more prominent by increasing applied magnetic field. Such investigations in graphene and its layered structure may be effective for understanding quantum features of nanomaterials.