▎ 摘　　要

Top gated graphene field-effect transistors were fabricated using yttrium oxide film as high-kappa gate dielectric, and the gate voltage dependent drain current and gate capacitance characteristics were both measured on one graphene device. Based on the two kinds of data sets, we developed a method to extract the carrier mobility of graphene field-effect transistors, along with some other parameters, such as series resistance and residual carrier density. Prior to previous method, this method could well fit the transfer curve of graphene field-effect transistor with high gate oxide capacitance since its carrier concentration is directly obtained from the experimental data rather than from analytic equation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768690]