▎ 摘　　要

High performance single Cds nanowire (NW) as well as nanobelt (NB). Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of similar to 0.15 V, a short circuit current of similar to 275.0 pA and an energy conversion efficiency of upto similar to 1.65% . The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high performance. Schottky combined electrode which has the merits of low series resistance, high transparency and good Schottky contact to the CdS NW (NB). Besides, a promising site controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential appplication in integrated nano optoelectronic systems.