▎ 摘　　要

Ion implantation is a superior post-synthesis doping technique to tailor the structural properties of materials. Via density functional theory (DFT) calculation and ab-initio molecular dynamics simulations (AIMD) based on stochastic boundary conditions, we systematically investigate the implantation of low energy elements Ga/Ge/As into graphene as well as the electronic, optoelectronic and transport properties. It is found that a single incident Ga, Ge or As atom can substitute a carbon atom of graphene lattice due to the head-on collision as their initial kinetic energies lie in the ranges of 25-26 eV/atom, 22-33 eV/atom and 19-42 eV/atom, respectively. Owing to the different chemical interactions between incident atom and graphene lattice, Ge and As atoms have a wide kinetic energy window for implantation, while Ga is not. Moreover, implantation of Ga/Ge/As into graphene opens up a concentration-dependent bandgap from similar to 0.1 to similar to 0.6 eV, enhancing the green and blue light adsorption through optical analysis. Furthermore, the carrier mobility of ion-implanted graphene is lower than pristine graphene; however, it is still almost one order of magnitude higher than silicon semiconductors. These results provide useful guidance for the fabrication of electronic and optoelectronic devices of single-atom-thick two-dimensional materials through the ion implantation technique.