▎ 摘　　要

We numerically study the thermoelectric transport properties in trilayer graphene in the presence of a strong perpendicular magnetic field and disorder. In the unbiased case, we find that the thermoelectric transport has similar properties as in monolayer graphene. In the high temperature regime, the transverse thermoelectric conductivity alpha(xy) saturates to a universal value 8.31 k(B)e/h at the center of each Landau level (LL), and displays a linear temperature dependence at low temperatures. The Nernst signal has a peak at the central LL with a height of the order of k(B)/e, while the thermopower changes sign. We attribute this to the coexistence of particle and hole LLs around the Dirac point. When a finite interlayer bias is applied and a band gap is opened, it is found that the transport properties are consistent with those of a band insulator.