▎ 摘　　要

In this article, we report the weak localization effect of aluminum oxide (Al2O3)-deposited graphene field effect transistor. Initially, the resistivity tunability of graphene and Al2O3-deposited graphene devices were studied by applying gate voltages. Furthermore, the magnetotransport properties were investigated as a function of gate voltages and temperatures. It was observed that the phase coherence and intervalley scattering rates are enhanced with the deposition of Al2O3 on graphene film compared to uncovered graphene. Most transistor device fabrication processes use an oxide layer for top gate. Therefore, it would be interesting to explore the effect of an oxide capping layer on the magnetotransport properties of graphene. (C) 2017 Elsevier Ltd. All rights reserved.