• 文献标题:   Electrical transport properties of graphene on SiO2 with specific surface structures
  • 文献类型:   Article
  • 作  者:   NAGASHIO K, YAMASHITA T, NISHIMURA T, KITA K, TORIUMI A
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   113
  • DOI:   10.1063/1.3611394
  • 出版年:   2011

▎ 摘  要

The mobility of graphene transferred on a SiO2/Si substrate is limited to similar to 10 000 cm(2)V(-1)s(-1). Without understanding the graphene/SiO2 interaction, it is difficult to improve the electrical transport properties. Although surface structures on SiO2 such as silanol and siloxane groups are recognized, the relation between the surface treatment of SiO2 and graphene characteristics has not yet been elucidated. This paper discusses the electrical transport properties of graphene on specific surface structures of SiO2 prepared by O-2-plasma treatments and reoxidization. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611394]