• 文献标题:   Confinement, Transport Gap, and Valley Polarization in Graphene from Two Parallel Decorated Line Defects
  • 文献类型:   Article
  • 作  者:   GUNLYCKE D, VASUDEVAN S, WHITE CT
  • 作者关键词:   graphene, quantum transport, resonant tunneling, transport barrier, transport gap, valley polarization
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   USN
  • 被引频次:   30
  • DOI:   10.1021/nl304015q
  • 出版年:   2013

▎ 摘  要

Quantum transport calculations show that a transport gap approximately E-g = 2hv(F)/W can be engineered in graphene using two parallel transport barriers, separated by W, extended along the zigzag direction. The barriers, modeled by chemically decorated observed line defects, create confinement and resonance bands tracing the bands in zigzag nanoribbons. The resonance bands terminate at the dimensional crossover, where the states become boundary-localized, leaving the transport gap. The structure also allows for nearly perfect valley polarization.