• 文献标题:   Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices
  • 文献类型:   Article
  • 作  者:   FENG P, DU PF, WAN CJ, SHI Y, WAN Q
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Nanjing Univ
  • 被引频次:   8
  • DOI:   10.1038/srep34065
  • 出版年:   2016

▎ 摘  要

New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of similar to 3.2 mu F/cm(2) at 1.0 Hz, and it was used to fabricate multigate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.