• 文献标题:   AC Quantum Hall Effect in Epitaxial Graphene
  • 文献类型:   Article
  • 作  者:   LUOND F, KALMBACH CC, OVERNEY F, SCHURR J, JEANNERET B, MULLER A, KRUSKOPF M, PIERZ K, AHLERS F
  • 作者关键词:   2d electron gas 2deg, ac quantum hall effect qhe, dissipation, frequency dependence, graphene, quantum hall resistance
  • 出版物名称:   IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT
  • ISSN:   0018-9456 EI 1557-9662
  • 通讯作者地址:   Fed Inst Metrol
  • 被引频次:   4
  • DOI:   10.1109/TIM.2017.2652501
  • 出版年:   2017

▎ 摘  要

This paper describes the measurements of the ac quantum Hall effect (QHE) in epitaxial graphene in a set of six different devices. In typical graphene devices, capacitive losses cause a negative frequency dependence of the quantum Hall resistance, in contrast to the positive frequency dependence observed in GaAs devices. In one sample, very low ac dissipation was measured along with a quantum Hall resistance decreasing by less than one part in 10(7) between 0 and 10 kHz, which demonstrates the potential of the QHE in graphene samples to be used as a primary standard of impedance.