▎ 摘　　要

Multilayer graphene (MLG) is an opaque material and a poor conductor. Therefore, it is not suitable for use as the transparent conductive layer in GaN-based light-emitting diodes (LEDs). This study discusses Ag/Ni/MLG ohmic contacts with p-GaN for use in flip-chip light-emitting diodes (LEDs). The optimal conditions for fabricating Ag/Ni/MLG contacts are adopted to minimize the specific contact resistance to 1.02x 10(-3) Omega cm(2), as revealed after heat treatment at an alloying temperature of 700 degrees C for 10 min in nitrogen.