▎ 摘　　要

High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh20 alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh20 foil at 1050 degrees C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO2/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh20 was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm(2) V-1 s(-1). The results indicate that desired quality of single-layer graphene grown on PtRh20 foils can be obtained by tuning reaction conditions. (C) 2016 AIP Publishing LLC.