▎ 摘　　要

Owing to its compatibility with existing Si technology, epitaxial graphene on SiC is expected to replace III-V materials in future. This paper proposes an available approach to overcome the low quality and the high cost properties of traditional epitaxial growth access. The epitaxial graphene grows in low vacuum environment, using Ar as the filling gas. The epitaxial graphene was investigated with optical microscope, atomic force microscopy and Raman spectroscopy. It is found that large area graphene cover on SiC C-face conformally. The Raman results show that the materials obtained in lower vacuum environment are ordered and put free standing monolayer graphene.