▎ 摘　　要

The breakthrough of a bias-modulated van der Waals heterojunction photodetector based on graphene nanosheets embedded carbon (GNEC) film/n-type silicon was reported. An ultra-high responsivity of 92.58 A/W and fast response time of 12.5 ns were obtained from the bias modulated GNEC film/n-Si photodiode prepared by electron-assistant sputtering system. The excellent performance comes from the high-density edges as electron trapping centers in vertically grown GNs inside GNEC film. The electron trapped at edges increases the GNEC Fermi level and reduces the recombination rate of e-h pairs during photoexcitation. Moreover, the specific detectivity of GNEC/n-Si heterojunction device is achieved of 2.93 x 1014 Jones at bias = 0 V. This work has advancements in the development and application of ultra-sensitive devices of 2D materials.